Theoretical Model for Semiconductor System GaP: Ni2+
Rafidain Journal of Science,
2008, Volume 19, Issue 6, Pages 174-181
AbstractStudies of III-V semi-conducting compounds doped with Ni shows the need to introduce a theoretical model for GaP:Ni system.
A theoretical model using orthorhombic strain have been constructed with represent a promising approach to evaluate the energy levels for this system and interpret the experimental data of Zeeman studies of GaP:Ni2+ which have ground term 3F split with in tetrahedral crystal field into excited state 3T2 and ground state 3T1.
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