Theoretical Model for Vanadium Doped Gallium Arsenide
Rafidain Journal of Science,
Volume 16, Issue 4, Pages 7-14
AbstractAn orthorhombic strain model for V2+ in GaAs is presented in this work. Spin and effective Hamiltonians are derived for this model. A brief summary of the Jahn-Teller effects and random strains has been given. The JTEs show them selves by introducing reduction factors in the first and second terms of effective Hamilltonian and the random strains by lowering the local symmetry at V2+ ion sites.
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