With the simultaneous thermal spraying of glassy arsenic selenide (As2Se3), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As2Se3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As2Se3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.