Abstract

With the simultaneous thermal spraying of glassy arsenic selenide (As₂Se₃), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As₂Se₃ and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As₂Se₃ annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.