Abstract
Cadmium selenide (CdSe) thin films have been prepared by chemical bath deposition technique (CBD) on glass slides with a solution concentration of 0.5M, at temperature 50oC, pH=9 for 3 hours. The doping process was carried out with Tin (Sn) and Copper (Cu) with different concentrations 0.5%, 1%, 1.5% also by CBD tech. The effects of different doping concentration on the optical and structural properties of the doped CdSe films was studied. The energy gap was found decreased by increasing the concentration of Sn up to 1.81eV, while the energy gap increased with increasing the Cu concentration. The relation between the absorption coefficient and the incident photon energy was shown that the electronic transitions between the energy bands are direct type. XRD studies revealed that pure and doped thin films was polycrystalline with cubic structure (111) preferential orientation.
Main Subjects