Abstract
A current-mirror based transimpedance amplifier with inductor feedback simulation is reported. A 90 nm channel length process technology was simulated using N-MOSFET and P-MOSFET transistors. A transimpedance gain of 43.92 dBΩ was achieved with a bandwidth of 10 GHz (from 5 GHz to 15 GHz). The whole process was simulated using 1V DC supply voltage. From simulated data, pole frequency was found to be around 19.25 GHz. At 35 ºC, the transimpedance amplifier circuit was simulated and it was found that the input referred noise current of the circuit is 14.14 pA/√Hz at 5 GHz, 10 pA/√Hz at 10 GHz and 16.32 pA/√Hz at 15 GHz to cover the entire bandwidth of the circuit.
Keywords: Optical Preamplifier, Front-End Preamplifier, Optical receiver, Transimpedance Amplifier.
Main Subjects