Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex
Rafidain Journal of Science,
Volume 28, Issue 4, Pages 53-61
AbstractThe effect of pressure on energy gap for IV-IV compound SiC and Si1-xGex alloy have been investigated and evaluated by using Birch-Murnaghan equation of state (EOS) and Bardeen equation of state. Ambiguity in the effect of pressure and temperature on Eg of different SiC polytypes (3C, 4H, 6H) have been investigated and attributed.
Variation of Eg in Si1-x Gex evaluated and an interpretation, for it, has been suggested.
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